Jitendra Pal Singh
Department of Sciences, Manav Rachna University, Faridabad, 121004, Haryana, India.

Manish Kumar
Pohang Accelerator Laboratory, Postech University of Science and Technology, Pohang, 37673, Republic of Korea.

Weon Cheol Lim
Advanced Analysis and Data Center, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea.

Sangsul Lee
Sangsul Lee Pohang Accelerator Laboratory, Postech University of Science and Technology, Pohang, 37673, Republic of Korea.

Keun Hwa Chae
Advanced Analysis and Data Center, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea.

DOI https://doi.org/10.33889/PMSL.2024.3.2.018

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Abstract

Present work investigates local electronic structure of MgO films under irradiation of 100 MeV oxygen ions. MgO thin films of different thicknesses are grown using radio frequency sputtering. Near edge X-ray absorption fine structure (NEXAFS), measurements in surface sensitive, total electron yield (TEY) and bulk sensitive, total fluorescence yield (TFY) modes were performed at both O K-edge and Mg K-edges for pristine and irradiated counterpart. TFY measurements at both Mg K-edge and O K-edges for MgO thin films reflect the spectral features associated with hybridization among Mg2+ and O2- ions. These spectral features are analogues to that of bulk MgO. TEY mode Mg K and O K-edge NEXAFS spectra exhibit slightly reduced spectral features, which may be due to weakening of Mg-O hybridization at surface or some possible contamination of environmental species. The local electronic structure of these films under irradiation modifies slightly.

Keywords- Irradiation, Local electronic structure, Sputtering, Deposition time.

Citation

Singh, J. P., Kumar, M., Lim, W. C., Lee, S., & Chae, K. H. (2024). Local Electronic Structure of MgO: Impact of Deposition Time and Ion Irradiation. Prabha Materials Science Letters, 3(2), 283-297. https://doi.org/10.33889/PMSL.2024.3.2.018.