Vijay Kumar Gill
Department of Electronics and Communication Engineering, School of Engineering, Manav Rachna University, Aravalli Hills, Faridabad, 121004, Haryana, India.

Shiv Kumar Dixit
Department of Electronics and Communication Engineering, School of Engineering, Manav Rachna University, Aravalli Hills, Faridabad, 121004, Haryana, India.

Shruti Vashist
Department of Electronics and Communication Engineering, School of Engineering, Manav Rachna University, Aravalli Hills, Faridabad, 121004, Haryana, India.

DOI https://doi.org/10.33889/PMSL.2026.5.1.011

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Abstract

Lead free photovoltaic material CsGel3 has been simulated using SCAPS-1D (Solar Cell Capacitance Simulator software) under AM 1.5G spectrum. The cell is designed with the n-i-p structure FTO/ETL/CsGel3/HTL/Ag and results are based on effect of absorber layer thickness, doping and total defect density on photovoltaic output parameters of the simulated device. On implementing three different HTLs (CuSCN, Cu2O, and NiO), Cu2O is found a good HTL with CsGel3 absorbing layer and ZnO ETL. The factors influencing output parameters have been thoroughly investigated with CsGel3 and Cu2O as absorbing layer and HTL respectively. The simulated device achieved a maximum PCE of 30.62% at 2µm CsGeI3 thickness with corresponding open circuit voltage (Voc) ~ 1.40 Volt, short circuit current density (Jsc)~24.34 mA/cm2, and fill factor (FF) of 0.89. These results show a new path for CsGeI3 as main absorbing layer in a device to achieve environment friendly lead-free clean and renewable energy.

Keywords- CsGeI3, Solar cell, Cu2O, SCAPS-1D, PCE.

Citation

Gill, V. K. Dixit, S. K. & Vashist, S. (2026). Effect of Different Hole Transport Layers on the Performance of Lead Free CsGeI3 based Perovskite Solar Cell: A Numerical Simulation Study. Prabha Materials Science Letters, (1), 207-220. https://doi.org/10.33889/PMSL.2026.5.1.011.